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1 wafer epitaxy
Электроника: эпитаксия на подложке -
2 wafer epitaxy
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3 wafer epitaxy
The New English-Russian Dictionary of Radio-electronics > wafer epitaxy
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4 wafer epitaxy
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5 epitaxy
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6 epitaxy
- electron-beam epitaxy
- gaseous epitaxy
- gaseous-phase epitaxy
- horizontal-boat epitaxy
- hydrothermal epitaxy
- liquid epitaxy
- liquid-phase epitaxy
- molecular epitaxy
- molecular-beam epitaxy
- selective epitaxy
- solid epitaxy
- solid-phase epitaxy
- vacuum epitaxy
- vapor epitaxy
- vapor-phase epitaxy
- vapor-transport epitaxy
- wafer epitaxyThe New English-Russian Dictionary of Radio-electronics > epitaxy
См. также в других словарях:
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
Wafer (electronics) — Polished 12 and 6 silicon wafers. The flat cut into the right wafer indicates its doping and crystallographic orientation (see below) … Wikipedia
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
vapor-phase epitaxy wafer — garinės epitaksijos plokštelė statusas T sritis radioelektronika atitikmenys: angl. vapor phase epitaxy wafer vok. Dampfphasenepitaxiewafer, m rus. пластина с эпитаксиальным слоем из паровой фазы, f pranc. tranche d épitaxie en phase vapeur, f … Radioelektronikos terminų žodynas
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
materials science — the study of the characteristics and uses of various materials, as glass, plastics, and metals. [1960 65] * * * Study of the properties of solid materials and how those properties are determined by the material s composition and structure, both… … Universalium
Laser diode — Top: a packaged laser diode shown with a penny for scale. Bottom: the laser diode chip is removed from the above package and placed on the eye of a needle for scale … Wikipedia
Microfabrication — Synthetic detail of a micromanufactured integrated circuit through four layers of planarized copper interconnect, down to the polysilicon (pink), wells (greyish) and substrate (green) Microfabrication is the term that describes processes of… … Wikipedia
Chemical vapor deposition — DC plasma (violet) enhances the growth of carbon nanotubes in this laboratory scale PECVD apparatus. Chemical vapor deposition (CVD) is a chemical process used to produce high purity, high performance solid materials. The process is often used in … Wikipedia